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| Datasheet File OCR Text: |
| NTE2505 Silicon NPN Transistor Low Frequency, General Purpose Amp Features: D High Current Capacity D High DC Current Gain D Low Collector Emitter Saturation Voltage D High Emitter Base Breakdown Voltage Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA Collector Power Dissipation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) Test Conditions VCB = 20V, IE = 0 VEB = 10V, IC = 0 VCE = 5V, IC = 500mA VCE = 5V, IC = 1A VCE = 10V, IC = 50mA VCB = 10V, f = 1MHz IC = 1A, IB = 20mA IC = 1A, IB = 20mA Min - - 800 600 - - - - Typ - - - 260 27 0.15 0.85 Max 100 100 - - - 0.5 1.2 MHz pF V V Unit nA nA 1500 3200 Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Turn-On Time Storage Time Fall Time Symbol Test Conditions Min 30 25 15 - - - Typ - - - 0.14 1.35 0.1 Max - - - - - - Unit V V V s s s Collector Base Breakdown Voltage V(BR)CBO IC = 10A, IE = 0 V(BR)CEO IC = 1mA, RBE = V(BR)EBO IE = 10A, IC = 0 ton tstg tf VCC = 10V, VBE = -5V, 100IB1 = -100IB2 = IC = 700mA, Pulse Width = 20s, Duty Cycle 1% .271 (6.9) .098 (2.5) .137 (3.5) B C E .039 (1.0) .039 (1.0) .177 (4.5) .122 (3.1) .161 (4.1) .098 (2.5) |
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